概述
标准模板一
标准模板二
标准模板三
薄膜软模板
四英寸模板
六英寸模板
在科研中，很多用户需要用到光栅或点阵这些周期性的结构。有时用户不需要研究微纳米加工工艺，这样如果能花费低廉的价格买到这些成品将十分方便，只要接着从事后续的工作就可以了；有的用户自已拥有微纳米加工设备及经验，但纳米量级的尺寸要采用电子束曝光 可制备百纳米周期结构的紫外曝光、白光干涉等方法来进行加工，比如采用电子束曝光加工纳米级结构，若有效面积超过1平方厘米，占机时间会很长，并需要调整电子束光刻及干法刻蚀工艺来优化成品。
鉴于此，我们向用户提供光栅及点阵的纳米结构成品。衬底材料为硅单晶，可广泛应用于各类科学研究。
我们可提供纳米级微结构，衬底材料为硅单晶，广泛应用于科学研究。批量生产，品质高，且性价比高。
产品精度：
具体规格如下表所示：
光栅纳米结构模板 (线条+间距) Linear Nanostamps (line+space)
| 序号 | 周期 | 沟槽深度 | 占空比 ① | 线宽 ② | 样片尺寸③ |
1 | 139 nm | 50 nm | 50% | 69.5 nm | 12.5×12.5×0.7 mm |
2 | 139 nm | 50 nm | 50% | 69.5 nm | 25×25×0.7 mm ⑤ |
3 | 278 nm④ | 110 nm | 50% | 139 nm | 12.5×12.5×0.7 mm |
4 | 416.6 nm | 110 nm | 50% | 208 nm | 12.5×12.5×0.7 mm |
5 | 500 nm | multiple ⑥ | 44% | 220 nm | 8×8.3×0.7 mm |
6 | 500 nm | multiple ⑥ | 60% | 300 nm | 8×8.3×0.7 mm |
7 | 555.5 nm | 110 nm | 50% | 278 nm | 20×9×0.7 mm |
8 | 555.5 nm | 140 nm | 50% | 278 nm | 20×9×0.7 mm |
9 | 555.5 nm | 110 nm | 29% | 158 nm | 20×9×0.7 mm |
10 | 555.5 nm | 140 nm | 29% | 158 nm | 20×9×0.7 mm |
11 | 600 nm | multiple ⑥ | 43% | 260 nm | 8×8.3×0.7 mm |
12 | 600 nm | multiple ⑥ | 55% | 330 nm | 8×8.3×0.7 mm |
13 | 606 nm | 190 nm | 50% | 303 nm | 29×12×0.7 mm |
14 | 606 nm④ | 190 nm | 50% | 303 nm | 29×12×0.7 mm |
15 | 606 nm | 190 nm | 50% | 303 nm | 29×24.2×0.7 mm ⑤ |
16 | 675 nm | 170 nm | 32% | 218 nm | 24×10×0.7 mm |
17 | 675 nm | 170 nm | 32% | 218 nm | 24×30.4×0.7 mm ⑤ |
18 | 700 nm | multiple ⑥ | 47% | 330 nm | 8×8.3×0.7 mm |
19 | 700 nm | multiple ⑥ | 55% | 375 nm | 8×8.3×0.7 mm |
20 | 833.3 nm | 200 nm | 50% | 416 nm | 12.5×12.5×0.7 mm |
21 | 833.3 nm | 200 nm | 50% | 416 nm | 25×25×0.7 mm ⑤ |
①占空比表示线宽和周期的比率。
③第二个尺寸相当于沟槽的长度。
④scientific" grade offered at a discount. It has at least 80% of usable area. Up to 80/100 scratch/dig/particles and irregular substrate shape may present.
⑤可定做更大尺寸
⑥深度可做成150, 250 和 350 nm。
二维纳米模板（矩形或六边形）2D nanostamps (rectangular and hexagonal lattice)
序号 | 周期 | 晶格类型 | 沟槽深度 | 特征宽度 | 衬底尺寸 |
1 | 600 nm | rect post | multiple ① | 195 nm | 8×8.3×0.7mm |
2 | 600 nm | rect post | multiple ① | 275 nm | 8×8.3×0.7mm |
3 | 700 nm | rect post | multiple ① | 260 nm | 8×8.3×0.7mm |
4 | 700 nm | rect post | multiple ① | 350 nm | 8×8.3×0.7mm |
5 | 600 nm | hex post | multiple ① | 165 nm | 8×8.3×0.7mm |
6 | 600 nm | hex post | multiple ① | 240 nm | 8×8.3×0.7mm |
7 | 700 nm | hex post | multiple ① | 220 nm | 8×8.3×0.7mm |
8 | 700 nm | hex post | multiple ① | 290 nm | 8×8.3×0.7mm |
9 | 600 nm | hex hole | multiple ① | 180 nm | 8×8.3×0.7mm |
10 | 700 nm | hex hole | multiple ① | 200 nm | 8×8.3×0.7mm |
11 | 700 nm | hex hole | multiple ① | 290 nm | 8×8.3×0.7mm |
①深度可做成150, 250 和 350 nm
| Line grating: | hex post： |
 |  |
| rect post: | hex hole： |
 |  |
我们可提供纳米级微结构，衬底材料为硅单晶，广泛应用于科学研究。批量生产，品质高，且性价比高。
产品精度：
| 产品说明：
|
具体规格如下表所示：
光栅结构（周期，线宽，高度，有效面积，衬底尺寸）
| Part No | Description | Image |
| Pattern 56 | Line grating Period: 125 nm Linewidth: 60 nm Height: 120 nm Area: 18 x 18 mm2 Substrate: Si 18 x 18 mm2 |  |
| Pattern 35 | Line arry Period: 150 nm Width: 75 nm Height: 150 nm Area: 15 x 15 mm2 Substrate: Si 15 x 15 mm2 |  |
| Pattern 71 New! | Line grating Period: 200 nm Linewidth: 100 nm Height: 60 nm or 90 nm Area: 25 x 25 mm2 Substrate: Si 25 x 25 mm2 |  |
| Pattern 2 | Line grating Period: 300 nm Width: 170 nm Height: 170 nm Area: 30 x 30 mm2 Substrate: Si 30 x 30 mm2 |  |
| Pattern 72 New! | Line grating Period: 375 nm Linewidth: 175 nm Height: 150 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 28 | Line grating Period: 550 nm Width: 288 nm Height: 300 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 53 | Line grating Period: 600 nm Linewidth: 400 nm Height: 100 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 51 | Line grating Period: 800 nm Linewidth: 400 nm Height: 380 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 47 | Line grating Period: 1300 nm Width: 750 nm Height: 480 nm Area: 2 inch diameter Substrate: Si 2 inch diameter |  |
| Pattern 27 | Line grating Period: 4000 nm Width: 2000 nm Height: 2000 nm or 2300 nm Area: 32 x 32 mm2 Substrate: Si 32 x 32 mm2 |  |
| Pattern 68 New! | Line grating Period: 4800 nm Linewidth: 2200 nm Height: 3200 nm or 2600 nm Area: 25 x 25 mm2 Substrate: Si 20 x 20 mm2 |  |
V型光栅结构
| Part No | Description | Image |
| Pattern 44 | V groove line grating Period: 10 μm Top Linewidth: 400 nm Height: 5 μm Area: 20 x 20 mm2 Substrate: Ni 20 x 20 mm2 |  |
| Pattern 50 | Deep v-groove line grating Period: 80 μm Linewidth: 4 μm Height: 7.5 μm Area: 4 inch Substrate: Si 4 inch |  |
矩形和六边形柱状点阵
| Part No | Description | Image |
| Pattern 54 | Square pillar array Period: 125 nm Diameter: 54 nm Height: 95nm Area: 10 x 10 mm2 Substrate: Si 10 x 10 mm2 |  |
| Pattern 55 | Square pillar array Period: 125 nm Diameter: 74 nm Height: 95nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 31 | Square pillar array Period: 150 nm Diameter: 62 nm Height: 135 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 61 | Square pillar array Period: 150 nm Diameter: 80 nm Height: 110 nm Area: 5 x 5 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 48 | Square pillar array Period: 250 nm Diameter: 115 nm Height: 200 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 1 | Square pillar array Period: 300 nm Diameter: 145 nm Height: 170 nm Area: 14 x 14 mm2 Substrate: Si 14 x 14 mm2 |  |
| Pattern 29 | Square pillar array Period: 550 nm Diameter: 300 nm Height: 150 or 300 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 52 | Square pillar array Period: 800 nm Diameter: 440 nm Height: 250 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 73 New! | Hexagonal pillar array Period: 200 nm Diameter: 100 nm Height: 100 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 70 New! | Hexagonal pillar array Period: 350 nm Diameter: 130 nm Height: 260 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 67 | Hexagonal pillar array Period: 400 nm Diameter: 140 nm Height: 100 nm Area: 5 x 5 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 3 | Hexagonal pillar array Period: 600 nm Diameter: 300 nm Height: 310 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 15 | Hexagonal pillar array Period: 750 nm Diameter: 325 nm Height: 260 nm Area: 25 x 25 mm2 Substrate: Si 25 x 25 mm2 |  |
| Pattern 7 | Hexagonal pillar array Period: 1000 nm Diameter: 400 nm Height: 280 nm Area: 20 x 20 mm2 Substrate: Si 26 x 26 mm2 |  |
| Pattern 17 | Hexagonal pillar array Period: 1010 nm Diameter: 470 nm Height: 750 nm Area: 25 x 25 mm2 Substrate: Si (0.7mm) 25 x 25 mm2 |  |
| Pattern 26 | Hexagonal pillar array Period: 1732 nm Diameter: 880 nm Height: 590 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 37 | Hexagonal pillar array Period: 3000 nm Diameter: 1400 nm Height: 5000 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 20 | Hexagonal pillar array Period: 3000 nm Diameter: 1800 nm Height: 1200 nm Area: 25 x 25 mm2 Substrate: Si 25 x 25 mm2 |  |
| Pattern 39 | Hexagonal tapered pillar array Period: 600 nm Diameter: top 80 nm, bot 260 nm Height: 160 nm Area: 20 x 20 mm2 Substrate: Quartz 20 x 20 mm2 |  |
| Pattern 41 | Square tapered pillar array Period: 250 nm Diameter: 136 nm Height: 150 nm Area: 14 x 14 mm2 Substrate: Si 14 x 14 mm2 |  |
矩形和六边形孔阵
| Part No | Description | Image |
| Pattern 69 New! | Square hole array Period: 125 nm Diameter: 65 nm Height: 90 nm Area: 20 x 20 mm2 Substrate: 20 x 20 mm2 |  |
| Pattern 62 | Square hole array Period: 150 nm Diameter: 65 nm Height: 100 nm Area: 5 x 5 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 63 | Square hole array Period: 200 nm Diameter: 70 nm Height: 110 nm Area: 5 x 5 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 64 | Square hole array Period: 250 nm Diameter: 70 nm Height: 110 nm Area: 5 x 5 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 24 | Square hole array Period: 350 nm Diameter: 225 nm Height: 300 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 74 New! | Square hole array Period: 200 nm Diameter: 100 nm Height: 100 nm Area: 20 x 20 mm2 Substrate: 20 x 20 mm2 |  |
| Pattern 30 | Hexagonal hole array Period: 345 nm Diameter: 227 nm Height: 200 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 | |
| Pattern 32 | Hexagonal hole array Period: 500 , 1000 , 2000 nm Diameter: 50, 100, 200 nm Height: 110 nm Area: 0.2 x 0.2 mm2 each (9x) Substrate: Si 24 x 24 mm2 |  |
| Pattern 4 | Hexagonal hole array Period: 600 nm Diameter: 300 nm Height: 50 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 16 | Hexagonal hole array Period: 750 nm Diameter: 380 nm Height: 420 nm Area: 25 x 25 mm2 Substrate: Si 25 x 25 mm2 |  |
| Pattern 36 | Hexagonal hole array Period: 1010 nm Diameter: 340 or 390 nm Height: 300 nm Area: 15 x 15 mm2 Substrate: Si 15 x15 mm2 |  |
| Pattern 18a | Hexagonal hole array Period: 1010 nm Diameter: 490 nm Height: 300 nm Area: 25 x 25 mm2 Substrate: Si (0.5mm) 25 x 25 mm2 |  |
| Pattern 18b | Hexagonal hole array Period: 1010 nm Diameter: 350 nm Height: 470 nm Area: 25 x 25 mm2 Substrate: Si (1mm) 25 x 25 mm2 |  |
| Pattern 21 | Hexagonal hole array Period: 3000 nm Diameter: 1500 nm Height: 850 nm Area: 20 x 20 mm2 Substrate: Si 25 x 25 mm2 |  |
| Pattern 22 | Hexagonal hole array Period: 3000 nm Diameter: 1200 nm Height: 1500 nm Area: 20 x 20 mm2 Substrate: Si 25 x 25 mm2 |  |
| Pattern 49 | Square hole array Period: 500 nm Diameter: 270 nm Height: 400 nm Area: 20 x 20 mm2 Substrate: Si 20 x 20 mm2 |  |
| Pattern 57 | Square hole array Period: 16.5 µm Width: 10 µm top, 6.5 µm bottom Height: 8.6 µm Area: 20 x 20 mm2 Substrate: Si 24 x 24 mm2 |  |
纳米及微米结构模板，其衬底材料为硅片。
注意：模板本身未做抗粘处理，如有需要，请联系销售人员。
具体规格如下表所示：
光栅结构 Linear Nanostamps
| Product No. | Period | Linewidth | Depth /Height | Material | Size |
| Pattern 100L -10 | 100nm | 50nm | 130nm | Si | 10mm×10mm |
| Pattern 100L -30 | 100nm | 50nm | 130nm | Si | 30mm×30mm |
| Pattern 140L -10 | 140nm | 70nm | 150nm | Si | 10mm×10mm |
| Pattern 2000L -10 | 2μm | 1μm | 1μm | Si | 10mm×10mm |
| Pattern 2000L -30 | 2μm | 1μm | 1μm | Si | 30mm×30mm |
六边形柱状点阵 Pillars on Hexagonal array
| Product No. | Period | Diameter | Depth /Height | Material | Size |
| Pattern 460P -10 | 460nm | φ230nm | 200nm or 500nm | Si | 10mm×10mm |
| Pattern 460P -15 | 460nm | φ230nm | 200nm or 500nm | Si | 15mm×15mm |
| Pattern 460P -20 | 460nm | φ230nm | 200nm or 500nm | Si | 20mm×20mm |
| Pattern 460P -25 | 460nm | φ230nm | 200nm or 500nm | Si | 25mm×25mm |
| Pattern 460P -30 | 460nm | φ230nm | 200nm or 500nm | Si | 30mm×30mm |
| Pattern 460P -40 | 460nm | φ230nm | 500nm | Si | 40mm×40mm |
六边形孔阵 Holes on Hexagonal array
| Product No. | Period | Diameter | Depth /Height | Material | Size |
| Pattern 460H -10 | 460nm | φ230nm | 200nm | Si | 10mm×10mm |
| Pattern 460H -15 | 460nm | φ230nm | 200nm | Si | 15mm×15mm |
| Pattern 460H -20 | 460nm | φ230nm | 200nm | Si | 20mm×20mm |
| Pattern 460H -30 | 460nm | φ230nm | 200nm | Si | 30mm×30mm |
| Pattern 1000H -10 | 1μm | φ500nm | 500nm | Si | 10mm×10mm |
| Pattern 1000H -30 | 1μm | φ500nm | 500nm | Si | 30mm×30mm |
结构示例：
| Product No. | Pattern | Pitch | Width/φ | Depth /Height | Material | Size |
| COP H460-120 | hole | 460nm、Hexagonal Array | φ230nm | 200nm | COP | φ120mm |
| COP P46-1200 | pillar | 460nm、Hexagonal Array | φ230nm | 200nm | COP | φ120mm |
| COP P1000-50 | pillar | 1μm、Hexagonal Array | φ500nm | 500nm | COP | φ50mm |
| COP LS2000-30 | Linear | 2μm | 1μm | 1μm | COP | φ30mm |
| COP LS2000-50 | Linear | 2μm | 1μm | 2μm | COP | φ50mm |
我们提供四英寸硅或石英模板，可用于压印工艺。批量生产制作，品质高且性价比高。
产品精度:
|  |
具体规格如下表所示：
Holes on Hexagonal Lattice（六边形孔阵）
Part No | Product | Period | Area | Diameter | Max. Etch depth (Si/Quartz) | Image | |
1 | P200h_h_100d | 200nm | φ94 mm | 90-120 nm | 120nm/100nm |
| |
2 | P350h_h_100d | 350nm | φ94 mm | 120-170 nm | 200nm/100nm | ||
3 | P450h_h_50d | 450nm | φ50 mm | 220-260 nm | 350nm/150nm | ||
4 | P500h_h_100d new! | 500nm | φ94 mm | 250-300 nm | 500nm/300nm | ||
5 | P600h_h_100d | 600nm | φ94 mm | 250-300 nm | 450nm/200nm | ||
6 | P750h_h_51w51 | 750nm | 51x51 mm2 | 250-350 nm | 450nm/200nm | ||
7 | P780h_h_50d | 780nm | φ50 mm | 250-380 nm | 450nm/200nm | ||
8 | P870_h_100d | 870nm | φ94 mm | 300-45 0nm | 550nm/250nm | ||
9 | P1000_h_100d | 1000nm | φ94 mm | 300~500 nm | 600nm/300nm | ||
10 | P1500h_h_51w51 | 1500nm | 51x51 mm2 | 400~650 nm | 600nm/300nm | ||
11 | P1700h_h_100d | 1700nm | φ94 mm | 500~800 nm | 800nm/400nm | ||
12 | P2000h_h_100d | 2000nm | φ94 mm | 600~1100 nm | 800nm/400nm | ||
13 | P3000h_h_100d | 3000nm | φ94 mm | 600~1400 nm | 1000nm/400nm | ||
14 | P3450h_h_100d | 3500nm | φ94 mm | 800~1600 nm | 1200nm/500nm | ||
15 | P5200h_h_100d | 5200nm | φ94 mm | 1200~2400 nm | 1200nm/500nm | ||
Holes on Square Lattice（矩形孔阵）
Part No | Product | Period | Area | Diameter | Max. Etch depth (Si/Quartz) | Image | |
|---|---|---|---|---|---|---|---|
1 | P125s_h_90d | 125nm | φ90mm | 50~70nm | 150nm/100nm |
| |
2 | P140s_h_80d | 140nm | Φ80mm | 60~80nm | 150nm/100nm | ||
3 | P150s_h_90d | 150nm | φ90mm | 60~90nm | 150nm/100nm | ||
4 | P190s_h-100d new! | 190nm | φ94mm | 85~115nm | 180nm/140nm | ||
5 | P200s_h_90d | 200nm | φ90mm | 70~120nm | 200nm/150nm | ||
6 | P235s_h_100d new! | 235nm | φ94mm | 100~135nm | 200nm/150nm | ||
7 | P300s_h_90d | 300nm | φ90mm | 120~180nm | 200nm/150nm | ||
8 | P350s_h_100d | 350nm | φ94mm | 240~280nm | 300nm/150nm | ||
9 | P375s_h_100d | 375nm | φ94mm | 150~250nm | 200nm/100nm | ||
Pillars on Hexagonal Lattice（六边形柱状点阵）
Part No | Product | Period | Area | Diameter | Max. Etch depth (Si/Quartz) | Image |
|---|---|---|---|---|---|---|
1 | P200h_p_100d | 200nm | φ94 mm | 90~120 nm | 120nm/100nm |
|
2 | P450h_p_50d | 450nm | φ50 mm | 200~250 nm | 350nm/150nm | |
3 | P500h_p_100d new! | 500nm | φ94 mm | 200~250 nm | 450nm/200nm | |
4 | P600h_p_100d | 600nm | φ94 mm | 200~300 nm | 450nm/200nm | |
5 | P750h_p_51w51 | 750nm | 51x51 mm2 | 200~350 nm | 450nm/200nm | |
6 | P780h_p_50d | 780nm | φ50 mm | 250~350 nm | 450nm/200nm | |
7 | P870h_p_100d | 870nm | φ94 mm | 300~400 nm | 550nm/250nm | |
8 | P1000h_p_100d | 1000nm | φ94 mm | 300~500 nm | 600nm/300nm | |
9 | P1500h_p_51w51 | 1500nm | 51x51 mm2 | 400~650 nm | 600nm/300nm | |
10 | P1700h_p_100d | 1700nm | φ94 mm | 500~800 nm | 800nm/400nm | |
11 | P2000h_p_100d | 2000nm | φ94 mm | 600~1100 nm | 800nm/400nm | |
12 | P3000h_p_100d | 3000nm | φ94 mm | 600~1400 nm | 1000nm/400nm | |
13 | P3450h_p_100d | 3500nm | φ94 mm | 600~1600 nm | 1200nm/500nm | |
14 | P5200h_p_100d | 5200nm | φ94 mm | 600~2000 nm | 1200nm/500nm |
Pillars on Square Lattice（矩形柱状点阵）
Part No | Product | Period | Area | Diameter | Max. Etch depth (Si/Quartz) | Image |
|---|---|---|---|---|---|---|
1 | P125s_p_90d | 125nm | φ90mm | 50~70nm | 90nm/60nm |
|
2 | P140s_p_80d | 140nm | φ80mm | 50~75nm | 75nm/ — | |
3 | P150s_p_90d | 150nm | φ90mm | 60~85nm | 75nm/ — | |
5 | P250s_p_90d | 250nm | φ94mm | 110~130nm | 200nm/100nm | |
6 | P280s_p_80d | 280nm | Φ80mm | 120~150nm | 200nm/100nm | |
7 | P300s_p_100d | 300nm | φ94mm | 120~160nm | 200nm/100nm | |
8 | P380s_p_100d new! | 380nm | φ94mm | 160~220nm | 400nm/300nm | |
9 | P400s_p_100d | 400nm | φ94mm | 150~220nm | 300nm/100nm | |
10 | P480s_p_100d new! | 480nm | φ94mm | 200~270nm | 500nm/400nm | |
11 | P500s_p_100d | 500nm | φ94mm | 200~250nm | 400nm/150nm | |
12 | P560s_p_80d | 560nm | Φ80mm | 200~280nm | 400nm/150nm | |
13 | P600s_p_100d | 600nm | φ94mm | 200~300nm | 500nm/250nm | |
14 | P760s_p_100d new! | 760nm | φ94mm | 330~430nm | 700nm/600nm | |
15 | P800s_p_100d | 800nm | φ94mm | 200~400nm | 500nm/300nm |
Linear Gratings（光栅结构）
Part No | Product | Period | Area | Width | Max. Etch depth (Si/Quartz) | Image | ||
|---|---|---|---|---|---|---|---|---|
1 | P125L-80d | 125nm | φ80 mm | 50~80 nm | 100nm/80nm |
| ||
2 | P140L_ 80d | 140nm | φ80 mm | 50~85 nm | 100nm/80nm | |||
3 | P150L_ 90d | 150nm | φ90 mm | 60~100 nm | 75nm/80nm | |||
4 | P200L_ 90d | 200nm | φ90 mm | 60~120 nm | 150nm/120nm | |||
5 | P250L_100d | 250nm | φ94 mm | 90~130 nm | 200nm/100nm | |||
6 | P280L_80d | 280nm | φ80 mm | 100~150 nm | 200nm/100nm | |||
7 | P300L_100d | 300nm | φ94 mm | 100~160 nm | 300nm/100nm | |||
8 | P380L_100d new! | 380nm | φ94 mm | 200~270 nm | 400nm/300nm | |||
9 | P400L_100d | 400nm | φ94 mm | 100~200 nm | 300nm/150nm | |||
10 | P470L_100d new! | 470nm | φ94 mm | 200~270 nm | 500nm/400nm | |||
11 | P500L_100d | 500nm | φ94 mm | 150~250 nm | 400nm/200nm | |||
12 | P560L_80d | 560nm | φ80 mm | 15~280 nm | 400nm/200nm | |||
13 | P600L_100d | 600nm | φ94 mm | 150~300 nm | 500nm/250nm | |||
14 | P760L_100d new! | 760nm | φ94 mm | 320~430 nm | 700nm/600nm | |||
15 | P800L_100d | 800nm | φ94 mm | 200~400 nm | 600nm/300nm | |||
16 | P1000L_100d | 1000nm | φ94 mm | 200~500 nm | 800nm/400nm | |||
17 | P1300L_75w55 | 1300nm | 75x55 mm2 | 300~650 nm | 1000nm/500nm | |||
Multi-pattern（复合结构）
Part No | Product | Description | Diameter | Period | Area | Max. Etch depth (Si/Quartz) |
1 | MHSL400-800 | Linear, hexagonal, square array combination，Periods: 400-800nm | pitch dependent | holes/ | 9 x each period，7.5mm x 7.5mm | 400 nm /150 nm |
2 | MP250L300 | Multi-period linear grating combination 1， Periods: 250nm, 275nm, 300nm | Linewidth(+/15nm): | lines | 3 x each period，7mm x 7mm | 200 nm/100 nm |
3 | MP300L600 | Multi-period linear grating combination 2，Periods: 300nm, 400nm, 500nm, 600nm | Linewidth (+/- 10%): | lines | 4 x each period，10mm x 10mm | 300 nm/150 nm |
4 | MP800L1500 | Multi-period linear grating combination 3，Periods: 800nm, 1000nm, 1200nm, 1500nm | Linewidth (+/- 10%): | lines | 4 x each period，20mm x 20mm | 1000 nm/500 nm |
5 | MP500L2050 | Multi-period linear grating combination 3，Periods: 550nm, 600nm, 650nm……1950nm, 2000nm, 2050nm | lines | 32 x 12mm x 12mm | 600nm/300nm |
如下是复合结构示意图：
 |  |  |
| MHSL400-800 | MP250L300 | MP300L600 |
我们可提供纳米级微结构，衬底材料为硅单晶及少量其它衬底，广泛应用于科学研究。批量生产，品质高，且性价比高。
具体规格如下表所示：
| 序号 | 周期(nm) | 类型 | 刻蚀深度(nm) | 衬底尺寸(mm) | 衬底材料 |
| 1 | 250 | line/space | ① | Φ 150 | Si |
| 2 | 250 | line/space | ① | 300 | Si |
| 3 | 275 | line/space | 80 | Φ 150 | Si |
| 4 | 275 | line/space | ① | Φ 150 | Si |
| 5 | 400 | line/space | ① | Φ 150 | Si |
| 6 | 435 | line/space | 135 | Φ 150 | Si |
| 7 | 450 | line/space | ① | Φ 150 | Si |
| 8 | 450 | line/space | 450 | Φ 150 | Si |
| 9 | 458.5 | line/space | 125 | Φ 150 | Si |
| 10 | 458.5 | line/space | ① | Φ 150 | Si |
| 11 | 500 | line/space | ① | Φ 150 | Si |
| 12 | 500 | line/space | 100 | Φ 150 | Si |
| 13 | 800 | line/space | ① | Φ 150 | Si |
| 14 | 2500 | line/space | ① | Φ 150 | Si |
| 15 | 2500 | line/space | 1000 | Φ 150 | Si |
| 16 | 325 | 2d pillar | ① | Φ 150 | Si |
| 17 | 325 | 2d pillar | 100 | Φ 150 | Si |
| 18 | 400 | 2d pillar | ① | Φ 150 | Si |
| 19 | 400 | 2d pillar | 110 | Φ 150 | Si |
| 20 | 450 | 2d pillar | ① | Φ 150 | Si |
| 21 | 450 | 2d pillar | 150 | Φ 150 | Si |
| 22 | 500 | 2d pillar | ① | Φ 150 | Si |
| 23 | 500 | 2d pillar | 100 | Φ 150 | Si |
| 24 | 500 | 2d pillar | 200 | Φ 150 | Si |
| 25 | 800 | 2d pillar | ① | Φ 150 | Si |
| 26 | 1000 | 2d pillar | ① | Φ 150 | Si |
| 27 | 1000 | 2d pillar | 400 | Φ 150 | Si |
| 28 | 1200 | 2d pillar | ① | Φ 150 | Si |
| 29 | 2000 | 2d pillar | ① | Φ 150 | Si |
| 30 | 2000 | 2d pillar | 133 | Φ 150 | Si |
| 31 | 400 | 2d pillar | 140 | Φ 150 | Si |
| 32 | 400 | 2d pillar | 100 SiO2 | Φ 150 | Si +100nm SiO2 |
| 33 | 500 | 2d pillar | ① | Φ 150 | Si |
| 34 | 500 | 2d pillar | 110 | Φ 150 | Si |
| 35 | 500 | 2d pillar | 200 | Φ 150 | Si |
| 36 | 600 | 2d pillar | ① | Φ 150 | Si |
| 37 | 657 | 2d pillar | ① | Φ 150 | Si |
| 38 | 657 | 2d pillar | 300 | Φ 150 | Si |
| 39 | 800 | 2d pillar | ① | Φ 150 | Si |
| 40 | 1000 | 2d pillar | ① | Φ 150 | Si |
| 41 | 1000 | 2d pillar | 160 | Φ 150 | Si |
| 42 | 400 | 2d pillar | ① | Φ 150 | fused silica |
| 43 | 500 | 2d conical pillar | ① | Φ 150 | Si |
| 44 | 800 | hex | 460 | Φ 150 | Si |
| 45 | 200 | hex hole | 460 | Φ 150 | Si |
| 46 | 470 | hex pillar | 125 | Φ 150 | Si |
| 47 | 800 | hex pillar | ① | Φ 150 | Si |
| 48 | 1800 | hex pillar | 475 | Φ 150 | Si |
①：尚未刻蚀
